Dielectric and impedance spectral characteristics of bulk ZnIn2Se4
Identifieur interne : 000162 ( Main/Repository ); précédent : 000161; suivant : 000163Dielectric and impedance spectral characteristics of bulk ZnIn2Se4
Auteurs : RBID : Pascal:14-0040719Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn2Se4 in a pellet form were investigated in the frequency range of 102-106 Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(EF) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000189
Links to Exploration step
Pascal:14-0040719Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Dielectric and impedance spectral characteristics of bulk ZnIn<sub>2</sub>Se<sub>4</sub></title><author><name sortKey="El Nahass, M M" uniqKey="El Nahass M">M. M. El-Nahass</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Faculty of Education, Ain Shams University, Roxy</s1><s2>Cairo 11757</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Cairo 11757</wicri:noRegion></affiliation></author><author><name sortKey="Attia, A A" uniqKey="Attia A">A. A. Attia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Faculty of Education, Ain Shams University, Roxy</s1><s2>Cairo 11757</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Cairo 11757</wicri:noRegion></affiliation></author><author><name sortKey="Salem, G F" uniqKey="Salem G">G. F. Salem</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Faculty of Education, Ain Shams University, Roxy</s1><s2>Cairo 11757</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Cairo 11757</wicri:noRegion></affiliation></author><author><name sortKey="Ali, H A M" uniqKey="Ali H">H. A. M. Ali</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Faculty of Education, Ain Shams University, Roxy</s1><s2>Cairo 11757</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Cairo 11757</wicri:noRegion></affiliation></author><author><name sortKey="Ismail, M I" uniqKey="Ismail M">M. I. Ismail</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Faculty of Education, Ain Shams University, Roxy</s1><s2>Cairo 11757</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Cairo 11757</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0040719</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0040719 INIST</idno><idno type="RBID">Pascal:14-0040719</idno><idno type="wicri:Area/Main/Corpus">000189</idno><idno type="wicri:Area/Main/Repository">000162</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Complex impedance</term><term>Dielectric losses</term><term>Electrical conductivity</term><term>Frequency dependence</term><term>Hopping conduction</term><term>Indium Zinc Selenides Mixed</term><term>Localized states</term><term>Permittivity</term><term>Relaxation time</term><term>Temperature effects</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépendance fréquence</term><term>Conductivité électrique</term><term>Constante diélectrique</term><term>Perte diélectrique</term><term>Conduction saut</term><term>Energie activation</term><term>Etat localisé</term><term>Impédance complexe</term><term>Temps relaxation</term><term>Effet température</term><term>Indium Zinc Séléniure Mixte</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn<sub>2</sub>Se<sub>4</sub> in a pellet form were investigated in the frequency range of 10<sup>2</sup>-10<sup>6</sup> Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(E<sub>F</sub>) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>434</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Dielectric and impedance spectral characteristics of bulk ZnIn<sub>2</sub>Se<sub>4</sub></s1></fA08><fA11 i1="01" i2="1"><s1>EL-NAHASS (M. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>ATTIA (A. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>SALEM (G. F.)</s1></fA11><fA11 i1="04" i2="1"><s1>ALI (H. A. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>ISMAIL (M. I.)</s1></fA11><fA14 i1="01"><s1>Physics Department, Faculty of Education, Ain Shams University, Roxy</s1><s2>Cairo 11757</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>89-94</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000500745420160</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>35 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0040719</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn<sub>2</sub>Se<sub>4</sub> in a pellet form were investigated in the frequency range of 10<sup>2</sup>-10<sup>6</sup> Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(E<sub>F</sub>) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70G22C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70G22G</s0></fC02><fC02 i1="03" i2="3"><s0>001B70B20E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépendance fréquence</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Frequency dependence</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Constante diélectrique</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Permittivity</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Perte diélectrique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Dielectric losses</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Conduction saut</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Hopping conduction</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Energie activation</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Activation energy</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etat localisé</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Localized states</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Impédance complexe</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Complex impedance</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Temps relaxation</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Relaxation time</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Effet température</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Temperature effects</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Indium Zinc Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium Zinc Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fN21><s1>048</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000162 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000162 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:14-0040719
|texte= Dielectric and impedance spectral characteristics of bulk ZnIn2Se4
}}
| This area was generated with Dilib version V0.5.77. |  |